bv伟德官方网站數理學院教授。1998年7月畢業于蘭州大學物理系凝聚态物理專業，獲理學博士學位，導師為陳光華教授。1999.08-2000.07在加拿大曼尼托巴大學做訪問學者，2001.01-2002.12航天部第五研究院蘭州物理所博士後（合作導師：陳學康），2001.09-2001.12複旦大學物理系高級訪問學者（合作導師：王迅教授，中國科學院院士）。2002年被遴選為碩士生導師。曾獲浙江省高校中青年教師學科帶頭人、紹興市第五、六批專業技術拔尖人才、學術帶頭人、浙江省優秀留學人員稱号。
二、主要研究領域及學術成果
主要從事半導體納米光電材料與器件、光子晶體、低維量子結構等方面的研究。主持完成3項國家自然科學基金、浙江省重大專項和浙江省自然科學基金以及蘇州市科技計劃項目。創新性地對納米微球進行表面功能性修飾，快速、大面積制備了理想的CdS三維光子晶體，開發了Ge量子點、量子阱高效率的發光器件和中紅外探測器和高密度電荷存儲器等，研究成果經國家自然基金委專家評審，獲優秀成果。出版《光子晶體原理與應用》專著和《半導體納米晶體的光學性質》譯著個一本，在國内外有影響力的學術刊物上發表論文100多篇，其中SCI論文50篇，EI論文10多篇，被他人引用100多次，引用論文期刊種類達到20多個，獲多項省、市級科技進步獎和高校成果獎。指導本科生物理作品創新競賽獲江蘇省一等獎，2015年指導本科生第十四屆“挑戰杯”獲全國二等獎。
三、代表性科研成果
[1]. 馬錫英.《光子晶體原理與應用》，專著，科學出版社，2010年。
[2] Miaofei Meng and Xiying Ma (通訊作者)， Improving the Photoelectric Characteristics of MoS2 Thin Films by Doping Rare Earth Element Erbium，Nanoscale Research Letters (2016) 11: 513-518.
[3] Weixia Gu, Jiaoyan Shen, Xiying Ma (通訊作者), Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors, Nano Rese. Lett. 9: 100-104, 2014, EI, SCI Ⅱ區．
[4] Xiying Ma, Hongming Mao, Miaofei Meng，Surface Plasmon Resonance Effect of the MoS2/Ag System，Materials Science Forum Online: 2017-06-19 ISSN: 1662-9752, Vol. 898, pp 1857-1861.
[5] Xiying Ma, Qiang Wang, and Weixia Gu，Enhancement of Photoelectric Efficiency via Optimization of Absorption and Excitation of Surface Plasmons in ZnO/CdS/MoS2/Ag Multilayer Films, Journal of Nanoelectronics and Optoelectronics Vol. 10, 1–4, 2015.
[6] Xiying Ma, Jie He, Kangye Chen, La Lin, Improvement In Mobility and Conductivity Of Few-Layer Mos2 Films, Inter. J. Modern Physics B, 28, (4)) 1450028-38，2014.
[7] Weixia Gu, Fan Yang, Chen Wu, Yi Zhang, Xiying Ma (通訊作者), Fabrication and investigation of the optoelectrical properties of MoS2 /CdS heterojunction solar cells, Nanoscale Research Letters 2014, 9: 662-666.
[8] Xiying Ma，Hao Zhang，Fabrication of graphene films with high transparent conducting characteristics，Nano. Rese. Lett.，8:440-445, 2013. EI, SCI Ⅱ區．
[9] Xiying Ma, The electromagnetic properties of dilute magnetic GeSi: Mn, quantum rings, J. Mater Sci, 2013, 48(5): 2111-2114.
[10] Xiying Ma, Miaoyuan Shi，Thermal Evaporation Deposition of Few-layer MoS2 Films，Nano-Micro Lett. 5(2), 135-139 (2013).
[11] Xiying Ma, Caoxin Lou, The electromagnetic properties of the Mn doped Ge/Si quantum dots diodes, Materials Science and Engineering B, 178 (2013) 174-179.
[12] Xiying Ma, Weixia Gu, Jiaoyan Shen, Yunhai Tang, Investigation of Electronic Properties of Graphene/Si Field-Effect Transistor, Nano Rese. Lett. 2012, 7:677-681
[13] Xiying Ma, Memory properties of a Ge nanoring MOS device fabricated by pulsed laser deposition，Nanotechnology，V. 19, 27506, 2008.
[14] Xiying Ma, Z. Yan, B. Yuan, B. Li. The Light Emitting Properties of Ge Nanocrystals Grown by Pulsed Laser Deposition, Nanotechnology, V. 16, 832-835, 2005.
[15] Xiying Ma, L. Zhang. Fabrication of Ge quantum rings from the droplets by pulsed laser deposition，Applied Physics B-Lasers and Optics, V. 91,173-176, 2008.
[16] Xiying Ma, C. Wang. Memory Properties of a Ge Nanocrystals MOS Device Fabricated by Pulsed Laser Deposition, Applied Physics B-Lasers and Optics, V.95，589-592, 2008.
[17] Xiying Ma, W. Shi, Z.Yan, Baoping Shen. Fabrication of Silica/Zinc Oxide Core-Shell Colloidal Photonic Crystals，Applied Physics B-Lasers and Optics, V. 88(22), 245-248, 2007.)
[18] Xiying Ma. Optical of Characteristics of CdS Photonic Crystals, Applied Physics B-Lasers and Optics, V.84, 339-341, 2006. (SCI Index:2.2
[19] Xiying Ma, Sh. H. Huang, Y. Chen, F. Lu. Investigation of the Quantum Confinement Effects in Ge Dots by Electrical Measurements, Applied Surface Science, V. 225, 281, 2004.
[20] Xiying Ma, Caoxin Lou，The Ferromagnetic Properties of Ge Magnetic Quantum Dots Doped With Mn，Applied surface science, 258（7, 2012, 2906-2909.
